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application/pdfIEEEIEEE Electron Device Letters;2016;37;9;10.1109/LED.2016.2594258Defectshydrogenindium gallium zinc oxide (IGZO)low-frequency noise (LFN)thin-film transistors (TFTs)The Influence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al<sub>2</sub>O<sub>3</sub>Taeho KimYunyong NamJihyun HurSang-Hee Ko ParkSanghun Jeon
IEEE Electron Device Letters1131 Sept. 201693710.1109/LED.2016.25942581134
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