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application/pdfIEEEIEEE Transactions on Electron Devices;2017;64;1;10.1109/TED.2016.2631567a-indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs)threshold voltage controlLow-Resistive High-Work-Function Gate Electrode for Transparent a-IGZO TFTsWoo Jae JangMyung Keun LeeJinhan YooEungtaek KimDae Young YangJunhong ParkJeong Woo ParkSang-Hee Ko ParkKyung Cheol Choi
IEEE Transactions on Electron Devices164 Jan. 201716410.1109/TED.2016.2631567169
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application/pdfIEEE Transactions on Electron Devices;2017;64;1;10.1109/TED.2016.2631567Low-Resistive High-Work-Function Gate Electrode for Transparent a-IGZO TFTs
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2016-12-16T06:46:16.000Z2018-12-10T16:10:52.000Z
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